Method for integrating a Bragg grating localized i

专利名称：Method for integrating a Bragg grating

localized in a semiconductor

发明人：BODERE, ALAIN,CARPENTIER, DANIELE申请号：EP96402862.5申请日：19961223公开号：EP0782227A1公开日：19970702

专利附图：

摘要：In order to form a Bragg grating in a semiconductor component, a process ofmoist etching is carried out through a resin mask which is developed after a holographicexposure. The regions of the grating situated in the front of the component can

consequently achieve an etching which is deeper than that of other regions. In order tocompensate for this phenomena, the process also includes a complementary irradiationthrough a second mask (E) placed at a distance from the resin mask (7) which defines theposition of the grating. This second mask has a partially reflective region, the reflectivitybeing achieved by the use of chromium on this mask.

申请人：ALCATEL OPTRONICS

地址：12 rue de la Baume 75008 Paris FR

国籍：FR

代理机构：Fournier, Michel

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